Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces

Recently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS₂ on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals.     

新型无机内保温涂层的性能及应用

根据水泥烧成热耗的组成，降低高温设备表面散热是降低水泥烧成热耗的重要途径之一，而减少高温窑炉墙壁的热传导可有效降低设备的表面散热。本文在介绍无机内保温涂层隔热原理的基础上，对保温涂层的应用效果进行了对比研究，通过在传统耐火隔热材料的基础上增加新型无机内保温涂层，可有效降低高温设备外表面温度，减少水泥生产中的散热损失，达到节能降耗的目的。     

Optimization of structural,electrical, and magnetic properties of ytterbium substituted W-type hexaferrite for multi-layer chip inductors

The rare earth (Yb³⁺) substituted W-type hexagonal ferrites with composition CaPb_2-xYb_xFe₁₆O₂₇ (x = 0.0, 0.5, 1.0, 1.5, 2.0) were synthesized by a facile and cost-effective sol-gel auto combustion method with post heat treatment. The synthesized hexagonal ferrites were characterized by a variety of analytical techniques, and an impedance analyzer was used to investigate the effects of Ytterbium on structural, magnetic, spectral and dielectric properties. The relationship between their impedance, structure and dielectric properties was investigated. The X-ray diffraction patterns verify the presence of single-phase W-type hexagonal ferrites. Physical properties such as D_bulk (bulk density), D_xrd (X-ray density), and P (porosity) of the CaPb_2-xYb_xFe₁₆O₂₇ W-type hexagonal ferrites were calculated. The bulk density of all the samples was decreased, and X-ray intensity was increased with the Ytterbium replacement in the W-type hexaferrite. By adding Yb³⁺ ions, the lattice parameters, cell volume and X-ray density were reduced due to the substitution of ytterbium with smaller ionic radii compared to the lead ion with large ionic radii. The AC-conductivity was increased from (1.523 × 10^?5 to 6.699 × 10^?5) Ωcm^?1. The dielectric constant and tangent loss was found to decrease substantially. The magnetic properties were found to enhance by the substitution of Yb³⁺. The low coercivity value of Yb³⁺ substituted W-type hexagonal ferrites are suitable for magnetic recording media operated at a high-frequency regime. The enhancement of electrical, dielectric and magnetic characteristics suggests these materials as promising for multi-layer chip inductors (MLCIs) circuit applications.     

Piezoelectricity in Monolayer Hexagonal Boron Nitride

2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunneling devices to composites. Monolayer hBN, which has no center of symmetry, is predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, this effect is observed as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity is found in bilayer and bulk hBN, where the center of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques.     

基于Matlab计算滚动轴承滚滑接触内部应力分布

滚动轴承服役过程中,因滚滑现象和残余应力的存在,使赫兹接触应力不能反映材料真实的受力状态,应力分布与实验现象存在一定的偏差,因此滚滑接触下材料的内部应力计算显得尤为重要。研究一种快速、简单的材料滚滑接触内部应力的计算方法,以替代耗时长的有限元法。以现有公式为基础,通过Matlab编程计算滚滑接触下材料内部的应力场;对比不同摩擦因数下2D、3D滚滑接触内部应力场的差别。结果表明:摩擦因数越大,最大剪切应力越大,位置越接近表面,与滚动方向的夹角越小;切向摩擦力使接触点两侧最大正交切应力大小及位置发生变化;随着摩擦因数增大,一侧应力值上升,位置靠近表面,另一侧反之。提出的计算方法简单、方便,其结果为解析解,便于与残余应力或其他应力结合求出真实应力场。通过实例分析发现,真实应力场能够更好地解释实验现象,对于轴承材料组织演变的研究有重要意义。     

A novel solid solution (K1-xNax)2Mo2O7 (0.0 ≤ x ≤ 0.3) ceramics with ultra-low sintering temperatures

The (K_1-xNa_x)₂Mo₂O₇ (0.0?≤?x?≤?0.3) ceramics with ultra-low sintering temperatures were prepared by a modified solid-state reaction method. Polyvinyl ethanol (PVA) binder was replaced by ethanol and isostatic pressing technology was used, which improved the density of the ceramics effectively and avoided the side effect of the residual PVA. When x?≤?0.3, the (K_1-xNa_x)₂Mo₂O₇ ceramics are with a triclinic phase and all components can be sintered well at 450?°C. The substitution of Na⁺ at the K-site modified the dielectric properties of K₂Mo₂O₇ ceramic and in particular increased the Q?×?f value. Among all the components, the (K_0.8Na_0.2)₂Mo₂O₇ ceramic exhibited the best microwave dielectric properties with a permittivity of 8.7, a Q?×?f value of 50 300?GHz and a temperature coefficient of ?64?ppm/°C. The (K_1-xNa_x)₂Mo₂O₇ (0.0?≤?x?≤?0.3) ceramics are very potential candidates for ultra-LTCC devices and the modified solid-state reaction method is an excellent substitution for the conventional solid-state method.     

考虑水平（切向）位移影响的垫层孔隙内土工膜顶胀

The common cushion layer used in the geomembrane face rockfill dam is made of granular materials such as gravel and non-fine concrete where bulge deformation or failure of geomembrane is very likely to occur in its surface holes. The curve intersection method based on the thin film theory is the common method used to analyze the bulge deformation of the geomembrane in the surface holes of cushion layer. However, it is inaccurate due to the neglection of horizontal (tangential) displacement of the geomembrane. Based on the FEM theory, a new method is proposed, which takes the horizontal (tangential) displacement of geomembrane into consideration, and is validated by the bulge tests on the geomembrane in a circular hole. The deformations and strains of the geomembrane in different shapes of holes are analyzed by this method, and different strain distributions and failure modes are obtained. The curve intersection method is also used to compare with the new method under the same condition. It is indicated that there is less difference in the deformation and average strain of the geomembrane when the water pressure is low. However, when the water pressure is relatively high, the influences of horizontal (tangential) displacement of the geomembrane on its strain should not be neglected.     

Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N₂ or H₂/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al₂O₃ cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.     

某新型运载火箭助推器热试车吊装与固定方案设计

针对某新型运载火箭助推器的热试车试验,开展吊装固定方案设计,通过关键技术攻关,成功实现中国首次最大推力火箭子级热试车试验的吊装对接与固定,并且吊装固定方案安全可靠、简单易行、经济性好,为后续该新型火箭助推器发射场合练试验积累了宝贵经验。     

有孔内基础平台的竖直孔空心砖结构设计探讨

孔内基础平台设置在现有模数空心砖孔洞的上部,在孔洞内形成小平台,其能阻止砂浆掉落孔洞内,使空心砖的保温功能得以实现。孔内基础平台的设置将砖缝层平面摩擦改变为曲面摩擦,每一个孔洞的孔内基础砂浆与砖缝层面砂浆合为一体,砖缝层面摩擦力提升,墙体抗震能力提升。